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IS43DR32160C - 16Mx32 512Mb DDR2 DRAM

Description

ISSI's 512Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation.

The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.

Features

  • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V.
  • JEDEC standard 1.8V I/O (SSTL_18-compatible).
  • Double data rate interface: two data transfers per clock cycle.
  • Differential data strobe (DQS, DQS).
  • 4-bit prefetch architecture.
  • On chip DLL to align DQ and DQS transitions with CK.
  • 4 internal banks for concurrent operation.
  • Programmable CAS latency (CL) 3, 4, 5, and 6 supported.
  • Posted CAS and programmable additive latency.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS43DR32800A 8Mx32 256Mb DDR2 DRAM
IS43DR32801A 8Mx32 256Mb DDR2 DRAM
IS43DR32801B 256Mb DDR2 DRAM
IS43DR16128C DDR2 DRAM
IS43DR16160B DDR2 DRAM

Full PDF Text Transcription

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IS43/46DR32160C 16Mx32 512Mb DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.
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