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IS43DR16640B - 1Gb DDR2 SDRAM

This page provides the datasheet information for the IS43DR16640B, a member of the IS46DR81280B 1Gb DDR2 SDRAM family.

Datasheet Summary

Description

DDR2 SDRAM (128Mx8) TW-BGA Ball-out (Top-View) (8.00mm x 10.50mm) Symbol CK, CK# CKE CS# RAS#,CAS#,WE# A[13:0] BA[2:0] DQ[7:0] DQS, DQS# RDQS, RDQS# DM VDD VSS VDDQ VSSQ VREF VDDL VSSDL ODT NC Description Input clocks Clock enable Chip Select Command control pins Address Bank Address I/O Data Stro

Features

  • Clock frequency up to 400MHz.
  • 8 internal banks for concurrent operation.
  • 4-bit prefetch architecture.
  • Programmable CAS Latency: 3, 4, 5, 6 and 7.
  • Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6.
  • Write Latency = Read Latency-1.
  • Programmable Burst Sequence: Sequential or Interleave.
  • Programmable Burst Length: 4 and 8.
  • Automatic and Controlled Precharge Command.
  • Power Down Mode.
  • Auto Refresh and Self Refresh.
  • Refresh Interval: 7.8 .

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Datasheet preview – IS43DR16640B

Datasheet Details

Part number IS43DR16640B
Manufacturer ISSI
File Size 1.04 MB
Description 1Gb DDR2 SDRAM
Datasheet download datasheet IS43DR16640B Datasheet
Additional preview pages of the IS43DR16640B datasheet.

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Full PDF Text Transcription

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IS43/46DR81280B(L), IS43/46DR16640B(L) 1Gb (x8, x16) DDR2 SDRAM MARCH 2015 FEATURES  Clock frequency up to 400MHz  8 internal banks for concurrent operation  4-bit prefetch architecture  Programmable CAS Latency: 3, 4, 5, 6 and 7  Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6  Write Latency = Read Latency-1  Programmable Burst Sequence: Sequential or Interleave  Programmable Burst Length: 4 and 8  Automatic and Controlled Precharge Command  Power Down Mode  Auto Refresh and Self Refresh  Refresh Interval: 7.
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