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IS42VS32800J - 256Mb Synchronous DRAM

This page provides the datasheet information for the IS42VS32800J, a member of the IS42VS16160J 256Mb Synchronous DRAM family.

Datasheet Summary

Description

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture.

All input and output signals refer to the rising edge of the clock input.

Both write and read accesses to the SDRAM are burst oriented.

Features

  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access and pre- charge.
  • Programmable CAS latency: 2, 3.
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page.
  • Programmable Burst Sequence:.
  • Sequential and Interleave.
  • Auto Refresh (CBR).

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Datasheet preview – IS42VS32800J

Datasheet Details

Part number IS42VS32800J
Manufacturer ISSI
File Size 275.90 KB
Description 256Mb Synchronous DRAM
Datasheet download datasheet IS42VS32800J Datasheet
Additional preview pages of the IS42VS32800J datasheet.

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Full PDF Text Transcription

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IS42VS83200J / IS42VS16160J / IS42VS32800J 32Mx8, 16Mx16, 8Mx32 256Mb Synchronous DRAM FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and pre- charge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full Page • Programmable Burst Sequence: – Sequential and Interleave • Auto Refresh (CBR) OPTIONS • Configurations: – 32M x 8 – 16M x 16 – 8M x 32 • Power Supply IS42VSxxx – Vdd/Vddq = 1.8V • Packages: x8 –TSOP II (54) x16 –TSOP II (54) x32 – TSOP II (86) • Temperature Range: Industrial (–40 ºC to 85 ºC) FEBRUARY 2015 DESCRIPTION ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture.
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