IS42VS16400E Datasheet PDF - ISSI 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Specs

IS42VS16400E - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Datasheet Summary

Description

A0-A11 BA0, BA1 DQ0 to DQ15 CLK CKE Address Input Bank Select Address Data I/O System Clock Input Clock Enable CS RAS CAS Chip Select Row Address Strobe Command Column Address Strobe Command WE LDQM UDQM VDD GND VDDq GNDq NC Write Enable Lower Bye, Input/Output Mask U

Features

Clock frequency: 133 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Single 1.8V power supply.
LVCMOS interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Self refresh modes.
4096 refresh cycles every 64 ms.
Random column address every clock cycle.

Datasheet Details

Part number	IS42VS16400E
Manufacturer	ISSI
File Size	785.34 KB
Description	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Datasheet	IS42VS16400E Datasheet
Additional preview pages of the IS42VS16400E datasheet.

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Full PDF Text Transcription

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IS42VS16400E 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM MAY 2009 FEATURES • Clock frequency: 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 1.

Published: Aug 2, 2016 |