IS42VS16100F Datasheet PDF - ISSI 512K Words x 16 Bits x 2 Banks 16Mb SDRAM Specs

IS42VS16100F - 512K Words x 16 Bits x 2 Banks 16Mb SDRAM

This page provides the datasheet information for the IS42VS16100F, a member of the IS42S16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM family.

Datasheet Summary

Description

IS45S16100F and IS42VS16100F are each organized as a 524,288-word x 16-bit x 2-bank for improved performance.

The synchronous DRAMs achieve highspeed data transfer using pipeline architecture.

Features

Clock frequency: IS42/45S16100F: 200, 166, 143 MHz IS42VS16100F: 133, 100 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Two banks can be operated simultaneously and independently.
Dual internal bank controlled by A11 (bank select).
Single power supply: IS42/45S16100F: Vdd/Vddq = 3.3V IS42VS16100F: Vdd/Vddq = 1.8V.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).

Datasheet Details

Part number	IS42VS16100F
Manufacturer	ISSI
File Size	1.16 MB
Description	512K Words x 16 Bits x 2 Banks 16Mb SDRAM
Datasheet	IS42VS16100F Datasheet
Additional preview pages of the IS42VS16100F datasheet.

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Full PDF Text Transcription

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IS42/45S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM JUNE 2012 FEATURES • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz IS42VS16100F: 133, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single power supply: IS42/45S16100F: Vdd/Vddq = 3.3V IS42VS16100F: Vdd/Vddq = 1.

Published: Aug 1, 2016 |