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IS42VM32400H - 1M x 32Bits x 4Banks Mobile Synchronous DRAM

Datasheet Summary

Description

These IS42/45SM/RM/VM32400H are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply.
  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 4K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type.
  • 1, 2, 4, 8 or Full Page for Sequential Burst.
  • 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.

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Datasheet Details

Part number IS42VM32400H
Manufacturer ISSI
File Size 611.35 KB
Description 1M x 32Bits x 4Banks Mobile Synchronous DRAM
Datasheet download datasheet IS42VM32400H Datasheet
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IS42/45SM/RM/VM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400H are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features  JEDEC standard 3.3V, 2.5V, 1.
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