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IS42VM16800F - 2M x 16Bits x 4Banks Mobile Synchronous DRAM

Datasheet Summary

Description

These IS42VM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

Features

  • JEDEC standard 1.8V power supply.
  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 4K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • Programmable Driver Strength Control - Full Strength or 1/2, 1/4 of Full Strength.
  • Deep Power Down Mode.
  • All inputs a.

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Datasheet Details

Part number IS42VM16800F
Manufacturer ISSI
File Size 451.76 KB
Description 2M x 16Bits x 4Banks Mobile Synchronous DRAM
Datasheet download datasheet IS42VM16800F Datasheet
Additional preview pages of the IS42VM16800F datasheet.

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IS42VM16800F 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42VM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features ƒ JEDEC standard 1.8V power supply. • Auto refresh and self refresh. • All pins are compatible with LVCMOS interface. • 4K refresh cycle / 64ms. • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
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