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IS34MC01GA16 - 3.3V 1Gb SLC NAND Flash Memory

This page provides the datasheet information for the IS34MC01GA16, a member of the IS34MC01GA08 3.3V 1Gb SLC NAND Flash Memory family.

Datasheet Summary

Description

Offered in 128Mx8 / 64Mx16 bits, this device is 1Gbit with spare 32Mbit capacity.

The device is offered in 3.3V VCC.

Its NAND cell provides the most cost effective solution for the solid state mass storage market.

Features

  • Voltage Supply:.
  • 3.3V Device: 2.7 V ~ 3.6V.
  • Operating Temperature:.
  • Industrial: -40 ~ 85℃.
  • Organization.
  • Memory Cell Array: (128M + 4M) x 8bit.
  • Data Register: (2K + 64) x 8bit.
  • Automatic Program and Erase.
  • Page Program: (2K + 64) bytes.
  • Block Erase: (128K + 4K) bytes.
  •   Page Read Operation.
  • Page Size:.
  • Random Read:.
  • Serial Access: (2K + 64) bytes 25us (Max. ) 25ns (Min. ).
  • Memory Cell: 1bit/Memory Cell.

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Datasheet preview – IS34MC01GA16

Datasheet Details

Part number IS34MC01GA16
Manufacturer ISSI
File Size 6.67 MB
Description 3.3V 1Gb SLC NAND Flash Memory
Datasheet download datasheet IS34MC01GA16 Datasheet
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Full PDF Text Transcription

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ADVANCED DATASHEET IS34MC01GA08/16 EET IS34MC01GA08/16 H 3.3V 1Gb SLC NAND Flash S Memory Specification and DATA Technical Notes ADVANCED Page 1 IS34MC01GA08 IS34MC01GA16 128M x 8bit / 64M x 16bit NAND Flash Memory PRODUCT LIST Part Number IS34MC01GA08 IS34MC01GA16 VCC Range 2.7V ~ 3.6V 2.7V ~ 3.6V Organization X8 X16   PKG Type 48-TSOP I, 63-BGA 48-TSOP I, 63-BGA FEATURES  Voltage Supply:  3.3V Device: 2.7 V ~ 3.6V  Operating Temperature:  Industrial: -40 ~ 85℃  Organization  Memory Cell Array: (128M + 4M) x 8bit  Data Register: (2K + 64) x 8bit  Automatic Program and Erase  Page Program: (2K + 64) bytes  Block Erase: (128K + 4K) bytes    Page Read Operation  Page Size:  Random Read:  Serial Access: (2K + 64) bytes 25us (Max.) 25ns (Min.
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