Datasheet4U Logo Datasheet4U.com

ISTS802 - 0.5mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL WIDE GAP SLOTTED INTERRUPTER SWITCHES

General Description

3.3 The ISTS802 series of opaque photointerrupters DIA are single channel switches consisting of a 1 Gallium Arsenide infrared emitting diode and a NPN silicon photo transistor mounted in a 2 polycarbonate housing.

Key Features

  • l High Sensing Accuracy Aperture - 0.5mm l 5mm Gap between LED and Detector l Also available with flying leads, with or without connector, supplied as required.

📥 Download Datasheet

Datasheet Details

Part number ISTS802
Manufacturer ISOCOM
File Size 75.98 KB
Description 0.5mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL WIDE GAP SLOTTED INTERRUPTER SWITCHES
Datasheet download datasheet ISTS802 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IST006N04NM6 40V MOSFET Infineon
IST019N08NM5 MOSFET Infineon
IST026N10NM5 MOSFET Infineon
IST0515A DC-DC Converter XP Power
IST2405A DC-DC Converter XP Power

Other Datasheets by ISOCOM

Part Number Description
ISTS802A 0.5mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL WIDE GAP SLOTTED INTERRUPTER SWITCHES
ISTS802B 0.5mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL WIDE GAP SLOTTED INTERRUPTER SWITCHES
ISTS802C 0.5mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL WIDE GAP SLOTTED INTERRUPTER SWITCHES
ISTS822S TRANSMISSIVE OPTO-ELECTRONIC DUAL CHANNEL SLOTTED INTERRUPTER SWITCHES
ISTS822SD TRANSMISSIVE OPTO-ELECTRONIC DUAL CHANNEL SLOTTED INTERRUPTER SWITCHES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com ISTS802, ISTS802A, ISTS802B, ISTS802C 0.5mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL WIDE GAP SLOTTED INTERRUPTER SWITCHES WITH TRANSISTOR SENSORS DESCRIPTION 3.3 The ISTS802 series of opaque photointerrupters DIA are single channel switches consisting of a 1 Gallium Arsenide infrared emitting diode and a NPN silicon photo transistor mounted in a 2 polycarbonate housing. The package is designed to optimise the mechanical resolution, coupling efficiency, ambient light rejection, cost and 11.3 reliability. Operating on the principle that objects 10.9 opaque to infrared will interrupt the transmission of light between an infrared emitting diode and a photo sensor switching the output from an "ON" state to an "OFF" state. FEATURES l High Sensing Accuracy Aperture - 0.