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IRHM7450SE - N-Channel Transistor

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Features

  • s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C I D @ VGS = 12V, TC = 100°C IDM PD.

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Datasheet Details

Part number IRHM7450SE
Manufacturer IRF
File Size 122.09 KB
Description N-Channel Transistor
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Full PDF Text Transcription

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Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1223B REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHM7450SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 500 Volt, 0.51Ω , (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.
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