Datasheet Details
| Part number | IRGPH40M |
|---|---|
| Manufacturer | IRF |
| File Size | 84.36 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet |
 IRGPH40M Datasheet
|
|
|
General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
Key Features
- Short circuit rated - 10µs @ 125°C, V GE = 15V.
- Switching-loss rating includes all "tail" losses.
- Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 1200V VCE(sat) ≤ 3.4V @VGE = 15V, I C = 18A n-channel.