IRF7424
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
8 7
A D D D D
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ T A = 25°C ID @ T A= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, V GS @ -10V Continuous Drain Current, V GS @ -10V Pulsed Drain Current Power Dissipation
- Power Dissipation
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