GP20B60PD
Features
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- NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability n-channel
Equivalent MOSFET Parameters RCE(on) typ. = 158mΩ ID (FET equivalent) = 20A
Benefits
- Parallel Operation for Higher Current Applications
- Lower Conduction Losses and Switching Losses
- Higher Switching Frequency up to 150k Hz
E C G TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFRM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref. Fig. C.T.4) Clamped Inductive Load Current
Max.
600 40 22 80 80 31 12 42 ±20 220 86 -55 to +150
Units
V d
Diode Continous Forward Current Diode Continous Forward Current Maximum Repetitive Forward Current Gate-to-Emitter...
