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SJTD11N65C - Super-Junction MOSFET

Features

  • RoHS Compliant.
  • Low ON Resistance.
  • Low Gate Charge.
  • Peak Current vs Pulse Width Curve.
  • Inductive Switching Curves Ordering Information PART NUMBER.

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Datasheet Details

Part number SJTD11N65C
Manufacturer IPS
File Size 1.03 MB
Description Super-Junction MOSFET
Datasheet download datasheet SJTD11N65C Datasheet

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Full PDF Text Transcription

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SJTD11N65C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 0.34Ω ID 11A Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART NUMBER PACKAGE SJTD11N65C TO-252 BRAND IPS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SJTD11N65C VDSS ID IDM Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current, VGS@10V (NOTE *2) 650 11 33 Power Dissipation PD Derating Factor above 25℃ 83.3 0.67 VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy(L=10mH) ±30 240 EAR Avalanche Energy ,Repetitive (NOTE *2) 0.
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