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SJTD08N65C - Super-Junction MOSFET

Features

  • RoHS Compliant.
  • Low ON Resistance.
  • Low Gate Charge.
  • Peak Current vs Pulse Width Curve.
  • Inductive Switching Curves Ordering Information PART NUMBER.

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Datasheet Details

Part number SJTD08N65C
Manufacturer IPS
File Size 317.60 KB
Description Super-Junction MOSFET
Datasheet download datasheet SJTD08N65C Datasheet

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Full PDF Text Transcription

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SJTD08N65C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 0.56Ω ID 8A Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART NUMBER PACKAGE SJTD08N65C TO-252 BRAND IPS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SJTD08N65C VDSS Drain-to-Source Voltage 650 ID Continuous Drain Current 8 IDM Pulsed Drain Current, VGS@10V (NOTE *2) 24 Power Dissipation PD Derating Factor above 25℃ 63 0.5 VGS Gate-to-Source Voltage ±30 EAS Single Pulse Avalanche Energy 162 EAR Avalanche Energy ,Repetitive (NOTE *2) 0.2 IAR Avalanche Current (NOTE *2) 1.
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