High Switching Speed
High Voltage
Built-in Damper Diode
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector
Full PDF Text Transcription for TT2142 (Reference)
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TT2142. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon NPN Power Transistor TT2142 DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performanc...
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mper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 20 A IB Base Current 3 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 6 A 65 W 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case
TT2142 Datasheet
