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STP90NF03L - N-Channel MOSFET

Features

  • Typical RDS(on)=0.0056Ω.
  • Conduction losses reduced.
  • Switching losses reduced.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP90NF03L ·FEATURES ·Typical RDS(on)=0.0056Ω ·Conduction losses reduced ·Switching losses reduced ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching application ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 90 65 360 PD Total Dissipation 150 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -65~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1 62.
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