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STD1802 - NPN Transistor

Description

Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max)( IC= 3A; IB= 0.15A) DC Current Gain -hFE = 100(Min)@ IC= 3A Fast -Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS CCFL dirvers Voltage regula

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max)( IC= 3A; IB= 0.
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