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Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STD15NF10T4
·FEATURES ·With To-252(DPAK) package ·Application oriented characterization ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃
（ TJ=175℃）
TC=125℃
Drain Current-Single Pulsed
±20
23 16
92
PD
Total Dissipation @TC=25℃
70
Tch
Max.
STD15NF10T4 Datasheet
