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STB32NM50N - N-Channel MOSFET

Description

Drain Current: ID= 22A@ TC=25℃ Drain Source Voltage : VDSS= 500V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation

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Switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER V

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Datasheet preview – STB32NM50N

Datasheet Details

Part number STB32NM50N
Manufacturer INCHANGE
File Size 201.93 KB
Description N-Channel MOSFET
Datasheet download datasheet STB32NM50N Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB32NM50N ·DESCRIPTION ·Drain Current: ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 22 A ID(puls) Pulse Drain Current 88 A Ptot Total Dissipation@TC=25℃ 190 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.66 ℃/W isc website：www.iscsemi.
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