Download STB20NM50 Datasheet PDF
Inchange Semiconductor
STB20NM50
FEATURES - Drain Current ID= 20A@ TC=25℃ - Drain Source Voltage- : VDSS= 500V(Min) - Fast Switching Speed - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - Switching applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage Gate-Source Voltage ±30 Drain Current-continuous@ TC=25℃ Pulse Drain Current Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to...