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SRAF560 - Schottky Barrier Rectifier

Features

  • Plastic material used carriers Underwriter Laboratory.
  • Metal silicon junction, majority carrier conduction.
  • Low power loss,high efficiency.
  • Guard ring for overvoltage protection.
  • High surge capability,high current capability.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Schottky Barrier Rectifier INCHANGE Semiconductor SRAF560 FEATURES ·Plastic material used carriers Underwriter Laboratory ·Metal silicon junction, majority carrier conduction ·Low power loss,high efficiency ·Guard ring for overvoltage protection ·High surge capability,high current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage,high frequency inverters ·Free wheeling and polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 60 V IF(AV) Average Rectified Forward Current 5 A Nonrepetitive Peak Surge Current IFSM 8.
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