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SPP80P06P - P-Channel MOSFET

Datasheet Summary

Description

175℃ operating temperature Avalanche rated dv/dt rated ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -80 IDM Drain Current-Single Pulsed -320 PD Total Dissipation @TC

Features

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  • Static drain-source on-resistance: RDS(on)≤0.023Ω.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number SPP80P06P
Manufacturer INCHANGE
File Size 238.38 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP80P06P Datasheet
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Full PDF Text Transcription

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isc P-Channel MOSFET Transistor SPP80P06P，ISPP80P06P ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.023Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·175℃ operating temperature ·Avalanche rated ·dv/dt rated ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -80 IDM Drain Current-Single Pulsed -320 PD Total Dissipation @TC=25℃ 340 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.
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