Full PDF Text Transcription for SPD15P10PG (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SPD15P10PG. For precise diagrams, and layout, please refer to the original PDF.
0V; ID= -10.6A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -15 A PD Total Dissipation @TC=25℃ 128 W Tj Max. Operating Temperature Junction -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 1.17 ℃/W SPD15P10PG isc website：www.iscsemi.
SPD15P10PG Datasheet
