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SPA20N65C3 - N-Channel MOSFET

Features

  • With TO-220F packaging.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • High peak current capability.
  • Improved transconductance.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor SPA20N65C3 ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 20.7 13.1 62.1 PD Total Dissipation 34.
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