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SPA16N50C3 - N-Channel MOSFET

Features

  • Drain-source on-resistance: RDS(on) ≤ 250mΩ@10V.
  • Reduced switching and conduction losses.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPA16N50C3 ·FEATURES ·Drain-source on-resistance: RDS(on) ≤ 250mΩ@10V ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 16 10 A IDM Drain Current-Single Pulsed 48 A PD Total Dissipation @TC=25℃ 34 W Tj Max.
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