SDT30B100D1 - Schottky Barrier Rectifier

Datasheet Summary

Features

Low Forward Voltage.
High Operating Junction Temperature.
Extremely low reverse leakage.
Optimized VF vs. IR trade off for high efficiency.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	SDT30B100D1
Manufacturer	INCHANGE
File Size	186.73 KB
Description	Schottky Barrier Rectifier
Datasheet	SDT30B100D1 Datasheet
Additional preview pages of the SDT30B100D1 datasheet.

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Full PDF Text Transcription

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Schottky Barrier Rectifier INCHANGE Semiconductor SDT30B100D1 FEATURES ·Low Forward Voltage ·High Operating Junction Temperature ·Extremely low reverse leakage ·Optimized VF vs. IR trade off for high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency switching ·High efficiency SMPS ·Automotive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VR Peak Repetitive Reverse Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 135℃ 30 A Non-repetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 130 A wave, single phase, 60Hz) TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website：www.

Published: Sep 14, 2020 |