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SDT20B100D1 - Schottky Barrier Rectifier

Datasheet Summary

Features

  • Low Forward Voltage.
  • High Operating Junction Temperature.
  • Extremely low reverse leakage.
  • Optimized VF vs. IR trade off for high efficiency.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – SDT20B100D1

Datasheet Details

Part number SDT20B100D1
Manufacturer INCHANGE
File Size 185.84 KB
Description Schottky Barrier Rectifier
Datasheet download datasheet SDT20B100D1 Datasheet
Additional preview pages of the SDT20B100D1 datasheet.

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Full PDF Text Transcription

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Schottky Barrier Rectifier INCHANGE Semiconductor SDT20B100D1 FEATURES ·Low Forward Voltage ·High Operating Junction Temperature ·Extremely low reverse leakage ·Optimized VF vs. IR trade off for high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency switching ·High efficiency SMPS ·Automotive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VR Peak Repetitive Reverse Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 135℃ 20 A Non-repetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 100 A wave, single phase, 60Hz) TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website：www.
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