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Schottky Barrier Rectifier
INCHANGE Semiconductor
SBR30200CT
FEATURES ·With TO-220 packaging ·Metal silicon junction, majority carrier conduction ·Low power loss, high efficiency ·Guardring for overvoltage protection ·High surge current capability ·Low stored charge majority carrier conduction ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Converters ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRMS
VR
IF(AV)
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
Average Rectified Forward Current @Tc=120℃
VALUE
UNI T
200
V
30
A
Nonrepetitive Peak Surge Current
IFSM
(8.