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isc Thyristors
INCHANGE Semiconductor
S6015L
DESCRIPTION ·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater
parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM Repetitive peak off-state voltage
600
V
VRRM Repetitive peak reverse voltage
600
V
IT(RMS) RMS on-state current
ITSM
Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=25℃ )
50HZ 60HZ
15
A
188 225
A
PG(AV) Average gate power dissipation
Tp=8.3ms
0.