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S2530A - NPN Transistor

Description

High Voltage-VCEX= 450V(Min.) Collector Current- IC = 10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in large screen color deflection circuits .

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isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCEX= 450V(Min.) ·Collector Current- IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 5 V ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 10 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.25 ℃/W S2530A isc website：www.iscsemi.
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