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RD3L140SP - P-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤84mΩ(VGS= -10V; ID= -14A).
  • Advanced trench process technology.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc P-Channel MOSFET Transistor RD3L140SP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤84mΩ(VGS= -10V; ID= -14A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Inverters ·DC / DC converter ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -14 PD Total Dissipation @TC=25℃ 20 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 6.25 UNIT ℃/W isc website：www.iscsemi.
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