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QM5HG-24 - NPN Transistor

Description

High Power Handling capacity High Collector-Base Voltage- : VCBO= 1200V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Base driver for High voltage transistor modules ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

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isc Silicon NPN Power Transistor QM5HG-24 DESCRIPTION ·High Power Handling capacity ·High Collector-Base Voltage- : VCBO= 1200V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Base driver for High voltage transistor modules ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEX Collector-Emitter Voltage 1200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 100 W -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.iscsemi.
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