Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -160V(Min)
DC current gain -
: hFE = 15 (Min) @IC= -8 A : hFE = 8 (Min) @IC= -16A
Complement to Type MJE4343
Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
For use in high po
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isc Silicon PNP Power Transistor MJE4353 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -160V(Min) ·DC current gain - : hFE = 15 (Min) @IC= -8 A : hFE = ...
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US)= -160V(Min) ·DC current gain - : hFE = 15 (Min) @IC= -8 A : hFE = 8 (Min) @IC= -16A ·Complement to Type MJE4343 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in high power audio amplifier and switching regulator circuits ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -16 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 A 125 W -65~150 ℃ Tstg Storage Temperature -65~150 ℃ THERM
MJE4353 Datasheet
