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MJE2360T - NPN Transistor

General Description

Collector Emitter Sustaining Voltage- : VCEO(SUS) = 350 V(Min) DC Current Gain- : hFE = 25(Min) @ IC= 50mA Low Collector Saturation Voltage- : VCE(sat) = 1.5V(Max.)@ IC= 100mA Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 350 V(Min) ·DC Current Gain- : hFE = 25(Min) @ IC= 50mA ·Low Collector Saturation Voltage- : VCE(sat) = 1.5V(Max.)@ IC= 100mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCEO Collector-Emitter Voltage VCEV Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE 350 375 6 0.