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MJ2501 - PNP Transistor

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Part number MJ2501
Manufacturer INCHANGE
File Size 202.06 KB
Description PNP Transistor
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Description

Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 1000 (Min) @ IC = -5A Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in complementary general purpose amplifier applications.ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80

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