Download MBRD10200CT Datasheet PDF
Inchange Semiconductor
MBRD10200CT
FEATURES - High frequency operation - Guard ring for enhanced ruggedness and long term reliability - Low forward voltage drop - 100% tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Switching power supply - Converters - Free-Wheeling diodes ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed on 128 A rated load conditions Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT ℃/W isc website:.iscsemi. 1 isc & iscsemi is registered trademark Schottky...