MBR20150CD
FEATURES
- Multilayer Metal -Silicon Potential Structure.
- Low Leakage Current.
- High Current Capability, High Efficiency.
- High Junction Temperature Capability.
- Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
- For use in low voltage,high frequency inverters, free wheeling and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM IF(AV) IFSM
TJ Tstg
Peak Repetitive Reverse Voltage
Average Rectified Forward Current Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions Junction Temperature Storage Temperature Range
VALUE 150 20 290- 2 150
-40~150
UNIT V A A ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX 3.0
UNIT ℃/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)
SYMBOL
PARAMETER
CONDITIONS
Maximum Instantaneous Forward Voltage
IF= 10A ; Tc= 25℃ IF= 10A ; Tc=...
