High Collector Current -IC= 3A
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 45V(Min)
Complement to Type KSB744A
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in audio frequency
Full PDF Text Transcription for KSD794A (Reference)
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isc Silicon NPN Power Transistor KSD794A DESCRIPTION ·High Collector Current -IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·Complement to Type KSB744...
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ter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·Complement to Type KSB744A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio frequency amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse 5 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.
KSD794A Datasheet
