JST41Z-1200BW
DESCRIPTION
- With TO-3PN packaging
- Insulated package
- Can be operated in 3 quadrants
- Advanced technology to provide customers with high mutation performances
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching applications
- Phase control
- Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM IT(RSM)
Repetitive peak reverse voltage Average on-state current
Tc=75℃
ITSM Surge non-repetitive on-state current
50HZ
PG(AV) Average gate power dissipation ( over any 20 ms period )
Tj
Operating junction temperature
Tstg Storage temperature
1200 1200
UNIT
-40~125 ℃ -40~150 ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM Repetitive peak reverse current
VR=VRRM Rated; Tj=25℃
IDRM Repetitive peak off-state current VD=VDRM Rated; Tj=125℃
VTM On-state...
