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J6920 - NPN Transistor

Description

High Breakdown Voltage- : VCBO= 1700V (Min) Low Saturation Voltage- : VCE(sat) = 3V (Max) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color display horizontal deflection output applications ABSOLUTE M

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J6920 NPN Silicon Transistor FAIRCHILD

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·Low Saturation Voltage- : VCE(sat) = 3V (Max) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 20 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0
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