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IXTY3N60P - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on) ≤ 2.9Ω@VGS=10V.
  • Fully characterized avalanche voltage and current.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor IXTY3N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.
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