IXTH24N50L - N-Channel MOSFET

Datasheet Summary

Features

Static drain-source on-resistance: RDS(on) ≤ 480mΩ@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IXTH24N50L
Manufacturer	INCHANGE
File Size	334.60 KB
Description	N-Channel MOSFET
Datasheet	IXTH24N50L Datasheet
Additional preview pages of the IXTH24N50L datasheet.

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 480mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Current Regulators ·Solid State Circuit Breakers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 24 A IDM Drain Current-Single Pulsed 50 A PD Total Dissipation @TC=25℃ 400 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Junction-to-case thermal resistance 0.

Published: Nov 11, 2020 |