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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IXTA80N12T2
·FEATURES ·Drain-Source On-Resistance: RDS(on)<17mΩ ·With TO-220 packaging ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
120
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
10.4 6.6
80
PD
Total Dissipation
325
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 0.
IXTA80N12T2 Datasheet
