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ISP80N08S2L - N-Channel MOSFET

Features

  • Drain Current.
  • ID= 80A@ TC=25℃.
  • Drain Source Voltage- VDSS= 75V(Min).
  • Static Drain-Source On-Resistance RDS(on) :7.1mΩ(Max).
  • 175°C operating temperature.
  • Advanced trench process technology.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor ISP80N08S2L FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- VDSS= 75V(Min) ·Static Drain-Source On-Resistance RDS(on) :7.1mΩ(Max) ·175°C operating temperature ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pluse 280 A PD Total Dissipation @TC=25℃ 300 W TJ Max.
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