Datasheet4U Logo Datasheet4U.com

IRLR7821 - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤10mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLR7821 HEXFET Power MOSFET International Rectifier
IRLR7821CPBF POWER MOSFET International Rectifier
IRLR7821PBF Power MOSFET International Rectifier
IRLR7807Z HEXFET Power MOSFET International Rectifier
IRLR7807ZPBF HEXFET Power MOSFET International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number Description
IRLR7807Z N-Channel MOSFET
IRLR7833 N-Channel MOSFET
IRLR7843 N-Channel MOSFET
IRLR014A N-Channel MOSFET
IRLR024N N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IRLR7821, IIRLR7821 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤10mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency Synchronous Buck Converters For Computer Processor Power ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 65 IDM Drain Current-Single Pulsed 260 PD Total Dissipation @TC=25℃ 75 Tj Max.