Datasheet4U Logo Datasheet4U.com

IRLR6225 - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤4.0mΩ(VGS=4.5V) RDS(on)≤5.2mΩ(VGS=2.5V).
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLR6225PbF Power MOSFET International Rectifier
IRLR6225TRPbF Power MOSFET International Rectifier
IRLR014 HEXFET POWER MOSFET International Rectifier
IRLR014 Power MOSFET Vishay Siliconix
IRLR014N HEXFET Power MOSFET International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number Description
IRLR014A N-Channel MOSFET
IRLR024N N-Channel MOSFET
IRLR120 N-Channel MOSFET
IRLR120N N-Channel MOSFET
IRLR2703 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor IRLR6225, IIRLR6225 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.0mΩ(VGS=4.5V) RDS(on)≤5.2mΩ(VGS=2.5V) ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Battery protection switch ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 20 VGS Gate-Source Voltage ±12 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 63 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 2.
Published: |