Datasheet4U Logo Datasheet4U.com

IRLR3915 - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤14mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLR3915 Power MOSFET International Rectifier
IRLR3915PBF Power MOSFET International Rectifier
IRLR3103 Power MOSFET International Rectifier
IRLR3103PbF Power MOSFET International Rectifier
IRLR3105 HEXFET Power MOSFET International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number Description
IRLR3103 N-Channel MOSFET
IRLR3105 N-Channel MOSFET
IRLR3110Z N-Channel MOSFET
IRLR3114Z N-Channel MOSFET
IRLR3303 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor IRLR3915, IIRLR3915 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤14mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 61 IDM Drain Current-Single Pulsed 240 PD Total Dissipation @TC=25℃ 120 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.3 110 UNIT ℃/W ℃/W isc website：www.iscsemi.
Published: |