Datasheet4U Logo Datasheet4U.com

IRLP3034 - N-Channel MOSFET

Features

  • br>.
  • Static drain-source on-resistance: RDS(on)≤1.7mΩ.
  • Enhancement mode: Vth =1.0 to 2.5V (VDS=VGS, ID=250μA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLP3034PbF Power MOSFET International Rectifier
IRL1004 Power MOSFET International Rectifier
IRL1004L Power MOSFET International Rectifier
IRL1004LPBF Power MOSFET International Rectifier
IRL1004PBF Power MOSFET International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number Description
IRL1004 N-Channel MOSFET
IRL1004S N-Channel MOSFET
IRL1404 N-Channel MOSFET
IRL1404S N-Channel MOSFET
IRL1404Z N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLP3034，IIRLP3034 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.7mΩ ·Enhancement mode: Vth =1.0 to 2.5V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switched And High Frequency Circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 1308 PD Total Dissipation @TC=25℃ 341 Tj Max.
Published: |