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isc P-Channel MOSFET Transistor
INCHANGE Semiconductor
IRLML6402
DESCRIPTION ·Ultra low on-resistance ·P-Channel MOSFET ·SOT-23 Footprint ·Available in tape and reel ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor
drive application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS
Gate-Source Voltage
ID
Drain Current-continuous@ TC=37℃
IDM
Drain Current Pulse
Total Dissipation@TA=25℃ Ptot
Total Dissipation@TA=75℃
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a Thermal Resistance,Junction to Ambient
VALUE -20 ±12 -3.7 -30 1.3 0.